The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Jun. 13, 2001
Applicant:
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/18242 ;
Abstract
A method for increasing a trench capacitance in deep trench capacitors is described, in which, in a standard method, after the etching of the arsenic glass, a wet-chemical etching is additionally performed. An n+-doped substrate results from the driving-out of the arsenic glass being widened in the trench, by about 20 nm, selectively both with respect to the lightly doped substrate and with respect to the oxide layer and with respect to the nitride layer.