Fremont, CA, United States of America

Inga Kuznetsova

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Inga Kuznetsova. Retrieved from https://idiyas.com/inventor/inga-kuznetsova

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Inga Kuznetsova: Patent Innovation in Profile Simulation Calibration.

Introduction

Inga Kuznetsova is an inventor associated with Tokyo Electron Limited in Fremont, California. Her patent work addresses the calibration of profile simulation using data collected during plasma processing.

Latest Patents

Kuznetsova is named on 1 patent: “Profile Simulation Calibration with In-Situ Sensor Data.” The invention describes executing a plasma recipe on a wafer and collecting in-situ sensor data during processing. Estimated plasma parameters derived from those data are entered into a profile simulator to predict the wafer’s profile. After processing, wafer metrology provides a measured profile, which is compared with the prediction to calibrate the simulator.

Career Highlights

Her patent reflects work at the intersection of plasma processing, sensor-based measurement, and simulation. By using in-situ data alongside post-process metrology, the method aims to improve the alignment between simulated and measured wafer profiles.

Collaborations

The patent associates Kuznetsova’s invention with Tokyo Electron Limited, a company active in semiconductor manufacturing equipment and processing technologies.

Conclusion

Inga Kuznetsova’s patented method combines in-situ plasma sensing and wafer metrology to calibrate profile simulations for semiconductor processing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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