The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Feb. 21, 2024
Tokyo Electron Limited, Tokyo, JP;
Jun Shinagawa, Fremont, CA (US);
Inga Kuznetsova, Fremont, CA (US);
Shyam Sridhar, Austin, TX (US);
Peter Lowell George Ventzek, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of profile simulator calibration is provided. The method includes executing a plasma recipe on a wafer in a processing chamber. In-situ plasma sensor data are collected by in-situ plasma sensors while the plasma recipe is executed. Estimated plasma parameters are obtained based on the in-situ plasma sensor data. A predicted profile of the wafer is obtained by inputting the estimated plasma parameters into a profile simulator. A measured profile of the wafer is obtained using wafer metrology after executing the plasma recipe. The profile simulator is calibrated by comparing the predicted profile with the measured profile.