Company Filing History:
Years Active: 2013-2015
Title: Ines Becker: Innovator in Semiconductor Technology
Introduction
Ines Becker is a prominent inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor technology, holding two patents that showcase her innovative approach to engineering.
Latest Patents
One of her latest patents is titled "Horizontal epitaxy furnace for channel SiGe formation." This invention provides a method and apparatus for recessing a channel region of the PFET and epitaxially growing channel SiGe in the recessed region inside a horizontally oriented processing furnace. The process includes forming n-channel and p-channel regions on the front side of a wafer, placing the wafers inside a horizontally oriented furnace, and epitaxially growing cSiGe without hole defects in the recessed p-channel regions.
Another notable patent is "Replacement gate process flow for highly scaled semiconductor devices." This method involves forming sacrificial gate structures for PFET and NFET transistors, removing these structures, and creating replacement gate structures. The process also includes forming contact openings in insulating material and performing an epitaxial deposition process to create source/drain regions in the PFET transistor.
Career Highlights
Ines Becker is currently employed at GlobalFoundries Inc., a leading company in semiconductor manufacturing. Her work focuses on advancing technologies that enhance the performance and efficiency of semiconductor devices.
Collaborations
Throughout her career, Ines has collaborated with talented professionals,