Gyeongsangnam-do, South Korea

In Seob Bae

This inventor holds 1 USPTO granted patent. Top assignee: Haesung Ds Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: In Seob Bae. Retrieved from https://idiyas.com/inventor/in-seob-bae-rhd3ozag

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: In Seob Bae: Innovator in Semiconductor Technology

Introduction

In Seob Bae is a notable inventor based in Gyeongsangnam-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

In Seob Bae holds a patent for a "Semiconductor package substrate having front and back side resin-filled trenches and method of manufacturing the same." This invention provides a semiconductor package substrate that includes a base substrate with a lower surface featuring a first trench and an upper surface with a second and third trench. The substrate incorporates a circuit pattern and conductive material, with a first resin arranged in the first trench and a second resin in the second and third trenches. Notably, the second trench exposes at least a part of the first resin.

Career Highlights

Bae is currently employed at Haesung DS Co., Ltd., where he continues to advance semiconductor technologies. His work has been instrumental in developing efficient manufacturing methods for semiconductor package substrates.

Collaborations

In his career, Bae has collaborated with notable colleagues, including Dong Jin Yoon and Sung Il Kang. Their combined expertise has contributed to the success of various projects within the semiconductor industry.

Conclusion

In Seob Bae is a prominent figure in semiconductor innovation, with a patent that showcases his expertise and creativity in the field. His contributions continue to influence the development of advanced semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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