Company Filing History:
Years Active: 2008-2013
Title: In-Jae Song: Innovator in GaN Substrate Fabrication
Introduction
In-Jae Song is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of gallium nitride (GaN) substrates. With a total of 5 patents to his name, his work has advanced the efficiency and cost-effectiveness of GaN production.
Latest Patents
One of In-Jae Song's latest patents is a method of fabricating a freestanding GaN substrate. This innovative process involves preparing a GaN substrate within a reactor, treating its surface with HCl and NH gases to form a porous GaN layer, and subsequently creating a GaN crystal growth layer on top. The entire process is performed in-situ within a single reactor, significantly simplifying traditional methods. This approach not only reduces manufacturing costs but also allows for self-separation of thick GaN without cracking, leading to a high yield and short process time.
Another notable patent is the method of fabricating multi-freestanding GaN wafers. This method entails mounting a GaN substrate in a reactor, forming a GaN crystal growth layer, and processing the surface to create a GaN porous layer. By repeating these steps, a stack of alternating layers is formed, which self-separates upon cooling. This technique also emphasizes cost reduction and high-quality wafer production without cracks.
Career Highlights
In-Jae Song has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and Samsung Corning Precision Materials Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Some of his notable coworkers include Jai-yong Han and Jun-sung Choi. Their collaborative efforts have further propelled innovations in the field of GaN substrate fabrication.
Conclusion
In-Jae Song's contributions to the fabrication of GaN substrates have significantly impacted the semiconductor industry. His innovative methods not only enhance production efficiency but also pave the way for future advancements in technology.