The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Oct. 11, 2006
Applicants:
Jai-yong Han, Suwon-si, KR;
Jun-sung Choi, Suwon-si, KR;
In-jae Song, Yongin-si, KR;
Inventors:
Assignee:
Samsung Corning Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/071 (2006.01); H01L 31/109 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NHgas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.