The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Nov. 22, 2005
In-jae Song, Yongin-si, KR;
Byoung-iyong Choi, Seoul, KR;
In-jae Song, Yongin-si, KR;
Byoung-Iyong Choi, Seoul, KR;
Abstract
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.