Moscow, Russia

Igor Veniaminovich Ryzhikov

This inventor holds 3 USPTO granted patents. Top assignee: Other. Active years: 1976.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Igor Veniaminovich Ryzhikov. Retrieved from https://idiyas.com/inventor/igor-veniaminovich-ryzhikov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 9.5

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • Moscow, SU (1976)
  • Moscow, S (1976)

Company Filing History:

goldMedal3 out of 834,601 
Other
 patents

Years Active: 1976

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3 patents (USPTO):Explore Patents

Title: Igor Veniaminovich Ryzhikov: Innovator in Semiconductor Technology

Introduction

Igor Veniaminovich Ryzhikov is a prominent inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on developing advanced semiconductor devices and methods that enhance the efficiency and functionality of electronic displays.

Latest Patents

Ryzhikov's latest patents include a semiconductor indicating device and a method for its production. This innovative device utilizes a semiconductor crystal with specific thicknesses and concentrations to create a digital data display. The p-region has a thickness of 0.1-0.3 µm, while the n-region's neutral atom concentration ranges from 1.5×1018 to 5×1018 cm-3. The compensated region, which contains a luminescence activator, has a thickness of 0.5-1.2 µm.

Another notable patent is for a semiconductor SiCl light source and its manufacturing method. This light source employs nitrogen-doped n-type silicon carbide, featuring a p-n junction that emits light within the visible spectrum. The p-layer is doped with an acceptor impurity, ensuring optimal performance. The uncompensated donor concentration in the base layer is maintained between 0.8×1018 to 5×1018 cm-3, with a central layer that enhances luminescence.

Career Highlights

Throughout his career, Ryzhikov has demonstrated a commitment to advancing semiconductor technology. His innovative approaches have led to the development of devices that are not only efficient but also reliable. His contributions have positioned him as a key figure in the field of electronics.

Collaborations

Ryzhikov has collaborated with notable colleagues, including Jury Alexandrovich Vodakov and Igor Ivanovich Kruglov. These partnerships have fostered an environment of innovation and creativity, further enhancing the impact of their collective work.

Conclusion

Igor Veniaminovich Ryzhikov is a distinguished inventor whose work in semiconductor technology has led to significant advancements in electronic devices. His patents reflect a deep understanding of materials and methods that push the boundaries of what is

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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