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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 3986193 B1

PDFFull Text
Date of Patent:
Oct. 12, 1976

Filed:

Jun. 13, 1975

Semiconductor sicl light source and a method of manufacturing same

Applicant:
Inventors:

Jury Alexandrovich Vodakov, Leningrad, SU;

Galina Alexandrovna Lomakina, Leningrad, SU;

Evgeny Nikolaevich Mokhov, Leningrad, SU;

Igor Ivanovich Kruglov, Moscow, SU;

Igor Veniaminovich Ryzhikov, Moscow, SU;

Vadim Ivanovich Pavlichenko, Kaliningrad Moskovskoi oblasti, SU;

Tatyana Georgievna Kmita, Moscow, SU;

Georgy Fedorovich Kholuyanov, Leningrad, SU;

Eduard Efimovich Violin, Leningrad, SU;

Jury Petrovich Maslakovets, deceased, LATE OF Leningrad, SU;

by Irina Valter-Maslakovets, administratrix, Leningrad, SU;

Assignee:

Other;

Attorney:

Holman & Stern

Primary Examiner:

Martin H Edlow

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 61 ; 357 63 ; 148190 ;
Abstract

A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concentration in said silicon carbide is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3, the p-layer is doped with an acceptor impurity with a minimum activation energy and with a solubility in silicon carbide of about 10.sup.19 to 10.sup.20 cm.sup..sup.-3, the uncompensated donor concentration in the base layer is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3 and a central layer, 0.05 to 1 micron thick, located between the p-layer and the base layer is doped with luminescence activators of donor and acceptor types to a concentration of 0.1 .times. 10.sup.18 to 2 .times. 10.sup.18 cm.sup..sup.-3 and has a resistivity greater than the resistivity of the base layer by at least three orders of magnitude.

Find Patent Forward Citations

Vodakov, Jury. (1976). Semiconductor sicl light source and a method of manufacturing same (U.S. Patent No. 3986193). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3986193

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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