Saint-Petersburg, Russia

Evgeny Nikolaevich Mokhov

This inventor holds 11 USPTO granted patents. Top assignees: The Fox Group, Inc., Other. Active years: 1976-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Evgeny Nikolaevich Mokhov. Retrieved from https://idiyas.com/inventor/evgeny-nikolaevich-mokhov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.4

ph-index = 6

Forward Citations = 114(Granted Patents)


Location History:

  • Leningrad, SU (1976 - 1979)
  • 195279 St. Petersburg, RU (2001)
  • St Petersburg, RU (2003)
  • St. Petersburg, RU (2002 - 2005)

Company Filing History:


Years Active: 1976-2005

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11 patents (USPTO):Explore Patents

Title: **The Innovative Journey of Evgeny Nikolaevich Mokhov**

Introduction

Evgeny Nikolaevich Mokhov, a distinguished inventor hailing from St. Petersburg, Russia, has made significant contributions to the field of materials science, particularly focusing on silicon carbide (SiC) technology. With an impressive portfolio of 11 patents, Mokhov's work exemplifies the profound impact of innovative thinking on industry and technology.

Latest Patents

Mokhov’s latest patents reveal cutting-edge advancements in the growth of low defect density silicon carbide. One notable invention involves an apparatus designed for the growth of low defect SiC, where the crystal undergoes a dual-stage sublimation process. In the first stage, the crystal expands laterally while growing axially, thereby reducing the propagation of dislocations and other defects. This innovative method ensures high-quality SiC crystals essential for various high-performance applications.

Another significant patent introduced by Mokhov focuses on a method and apparatus for axially growing single crystal silicon carbide with remarkably low defect density. The technology enables SiC to be grown with a dislocation density of less than 10 per square centimeter, benefiting numerous sectors requiring high-purity materials. This invention involves a specially treated crucible made from tantalum or niobium, ensuring that the inner surfaces do not absorb SiC vapors, thus optimizing the growth environment.

Career Highlights

Throughout his career, Mokhov has been affiliated with esteemed organizations, contributing his expertise and innovative spirit. Notable among them is The Fox Group, Inc., where he has played a pivotal role in advancing silicon carbide technologies. His dedication and skill have established him as a notable figure in the field.

Collaborations

Mokhov has collaborated with talented colleagues such as Yury Alexandrovich Vodakov and Alexandr Dmitrievich Roenkov. Together, they have fostered an environment of innovation and creativity, resulting in significant advancements within the materials science community.

Conclusion

Evgeny Nikolaevich Mokhov stands as a prominent inventor whose work continues to push the boundaries of technology and innovation in silicon carbide growth processes. With his impressive patent portfolio and collaborative efforts, Mokhov remains an influential figure in shaping the future of materials science. His contributions not only underline his inventive spirit but also highlight the importance of innovation in creating advanced materials with critical applications in various industries.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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