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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 3999206 B1

PDFFull Text
Date of Patent:
Dec. 21, 1976

Filed:

Dec. 29, 1975

Semiconductor indicating device and method for production of same

Applicant:
Inventors:

Vladimir Alexandrovich Babenko, Moscow, S;

Galina Georgievna Boeva, Moscow, S;

Eduard Efimovich Violin, Leningrad, S;

Jury Alexandrovich Vodakov, Leningrad, S;

Eleonora Grigorievna Ivanova, Moscow, S;

Tatyana Georgievna Kmita, Moscow, S;

Vadim Ivanovich Pavlichenko, Kaliningrad Moskovskoi oblasti, S;

Igor Veniaminovich Ryzhikov, Moscow, S;

Georgy Fedorovich Kholuyanov, Leningrad, S;

Igor Ivanovich Kruglov, Moscow, S;

Galina Alexandrovna Lomakina, Leningrad, S;

Vladimir Pavlovich Novikov, Moscow, S;

Assignee:

Other;

Attorney:

Holman & Stern

Primary Examiner:

Martin H Edlow

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 63 ; 357 58 ;
Abstract

A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 .mu.m, the concentration of neutral atoms in the n-region is from 1.5.times.10.sup.18 to 5.times.10.sup.18 cm.sup.-.sup.3 and the thickness of the compensated region disposed between said two regions containing a luminescence activator, has a thickness of 0.5-1.2 .mu.m. A method for production of a semiconductor digital display device whereby the p-n junction is formed by introducing an impurity which has a high surface concentration and a low diffusion coefficient in silicon carbide and then a luminescence activator is introduced from the same side to a depth exceeding by 3-4 times the diffusion depth. The device features a high resistance of the diffused region adjoining the luminescence contacts.

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Babenko, Vladimir. (1976). Semiconductor indicating device and method for production of same (U.S. Patent No. 3999206). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3999206

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