This inventor holds 2 USPTO granted patents. Top assignees: Nec Electronics Corporation, Renesas Electronics Corporation. Active years: 2007-2015.
Company Filing History:
1 out of 2,467 
1 out of 7,651 
Years Active: 2007-2015
Title: Ichirou Mizuguchi: Innovator in DRAM and Integrated Circuit Technologies
Introduction
Ichirou Mizuguchi is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the fields of dynamic random-access memory (DRAM) devices and integrated circuit apparatuses. With a total of 2 patents, Mizuguchi's work has had a lasting impact on the technology industry.
Latest Patents
Mizuguchi's latest patents include a DRAM device and an integrated circuit apparatus. The DRAM device features multiple N-channel MIS transistors arranged in a matrix over a P well, along with corresponding capacitors, word lines, and bit lines. This innovative design enhances the efficiency and performance of memory storage. The integrated circuit apparatus comprises a SRAM cell array with a lattice-like arrangement of CMOSFET memory cells. It includes a power controller that manages the power supply voltage to prevent latch-up occurrences, ensuring reliable operation.
Career Highlights
Throughout his career, Ichirou Mizuguchi has worked with prominent companies such as Renesas Electronics Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to develop cutting-edge technologies that have advanced the field of electronics.
Collaborations
Mizuguchi has collaborated with esteemed colleagues, including Hiroshi Furuta and Junji Monden. These partnerships have fostered innovation and contributed to the successful development of his patented technologies.
Conclusion
Ichirou Mizuguchi's contributions to DRAM and integrated circuit technologies exemplify his dedication to innovation in the electronics industry. His patents reflect a commitment to enhancing memory storage and circuit efficiency, making him a significant figure in the field.