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For the Inventor, By the Inventor

Fuchu, Japan

Ichiro Kanomata

This inventor holds 9 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 1977-1984.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ichiro Kanomata. Retrieved from https://idiyas.com/inventor/ichiro-kanomata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 195(Granted Patents)


Location History:

  • Fuchu, JA (1977)
  • Kokubunji, JP (1982)
  • Fuchu, JP (1978 - 1984)

Company Filing History:

goldMedal9 out of 42,760 
 
Hitachi, Ltd.
 patents

Years Active: 1977-1984

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9 patents (USPTO):Explore Patents
1. 4462863 - Microwave plasma etching (1984-07-31),
2. 4430138 - Microwave plasma etching apparatus having fan-shaped discharge (1984-02-07),
3. 4409520 - Microwave discharge ion source (1983-10-11),
4. 4393333 - Microwave plasma ion source (1983-07-12),
5. 4330384 - Process for plasma etching (1982-05-18),
6. 4316090 - Microwave plasma ion source (1982-02-16),
7. 4298419 - Dry etching apparatus (1981-11-03),
8. 4101411 - Plasma etching apparatus (1978-07-18),
9. 4058748 - Microwave discharge ion source (1977-11-15),

Title: Ichiro Kanomata: Innovator in Microwave Plasma Etching

Introduction

Ichiro Kanomata is a prominent inventor based in Fuchu, Japan. He has made significant contributions to the field of microwave plasma etching, holding a total of 9 patents. His work has advanced the technology used in various applications, particularly in the semiconductor industry.

Latest Patents

One of Kanomata's latest patents is a microwave plasma etching system. This system includes a vacuum chamber designed to provide a discharge space, equipped with an inlet for introducing a discharge gas that contains a fluorine-containing gas, hydrogen, and oxygen. The system also features magnetic field forming means to create a magnetic field in the discharge space, as well as microwave electric field forming means to generate a microwave electric field. The substrates holding means allows for the processing of substrates within the vacuum chamber. This innovative approach to microwave plasma etching results in excellent etching with minimal side etching.

Another notable patent is a microwave plasma etching apparatus that utilizes a fan-shaped discharge. In this apparatus, the surface of a sample is exposed to plasma generated by microwave discharge. The sample is transported while revolving along a circular orbit in a plasma exposure region, which is shaped like a fan. This design enhances the etching processing capability and improves the uniformity of the etching speed.

Career Highlights

Ichiro Kanomata is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to develop cutting-edge technologies that have a significant impact on the industry.

Collaborations

Kanomata has collaborated with notable coworkers, including Keizo Suzuki and Sadayuki Okudaira. Their combined expertise has contributed to the advancement of microwave plasma etching technologies.

Conclusion

Ichiro Kanomata's contributions to microwave plasma etching demonstrate his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving processes in the semiconductor industry, making him a key figure in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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