Location History:
- Shiroishi, JP (1987)
- Sapporo, JP (1985 - 1992)
Company Filing History:
Years Active: 1985-1992
Title: Ichiro Hide: Innovator in Semiconductor Technology
Introduction
Ichiro Hide is a prominent inventor based in Sapporo, Japan, known for his significant contributions to semiconductor technology. With a total of six patents to his name, he has developed innovative methods that enhance the efficiency and quality of semiconductor manufacturing processes.
Latest Patents
Ichiro Hide's latest patents include a groundbreaking method of forming a polycrystalline silicon layer on a semiconductor wafer. This method involves several steps, including placing semiconductor wafers in recesses on a mold body, creating a mold, and rotating it in a heating inert gas. The process maintains wafer temperatures between 1300°C and 1350°C, allowing for the pouring of heated melted silicon into the mold. This innovative approach enables the formation of an accumulated layer of 100 microns at high speed and with economic efficiency. Another notable patent is for a polycrystalline silicon wafer tray, which utilizes centrifugal force to create a thin molten material layer, ensuring that wafers can be formed simultaneously without surface projections.
Career Highlights
Ichiro Hide has made significant strides in his career at Hoxan Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's success but has also positioned him as a key figure in the field of semiconductor innovation.
Collaborations
Ichiro has collaborated with talented coworkers, including Junichi Umetsu and Takashi Yokoyama, who have contributed to his projects and innovations in semiconductor technology.
Conclusion
Ichiro Hide's innovative methods and patents have made a lasting impact on the semiconductor industry. His work continues to inspire advancements in technology and manufacturing processes.