The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 1989

Filed:

Nov. 03, 1986
Applicant:
Inventors:

Takashi Yokoyama, Sapporo, JP;

Ichiro Hide, Sapporo, JP;

Keiji Sawaya, Sapporo, JP;

Takeshi Matsuyama, Sapporo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A01J / ;
U.S. Cl.
CPC ...
425425 ; 425434 ; 425435 ; 264311 ;
Abstract

A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.


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