Hoxan Corporation

Ichiro Hide

Takashi Yokoyama

Junichi Umetsu

Keiji Sawaya

Yasuhiro Maeda

Takeyuki Matsuyama

Takeshi Matsuyama

A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.

Method of forming polycrystalline silicon layer on semiconductor wafer

A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.

Polycrystalline silicon wafer tray

An apparatus for producing a polyacetylene film by contacting acetylene gas with Ziegler-Natta catalyst to polymerize the acetylene gas in a vessel which comprises a catalyst introduction conduit to be introduced with the Ziegler-Natta catalyst provided at a cap provided at the top of the vessel and having an end opening disposed in the vicinity of the inner surface of the side wall of the vessel in such a manner that the conduit and the vessel are relatively moved in rotation, and a rotary transmission mechanism for driving to rotatably coat the catalyst flowed out from the end opening of the conduit on the inner surface of the bottom from the inner surface of the side wall of the vessel. Thus, the polyacetylene film can be produced in a uniform thickness and in a relatively large area by introducing the Ziegler-Natta catalyst of the suitable quantity, and the catalyst can be spread over the entire surface rapidly by the relative rotation between the conduit and the vessel.

Catalytic film polymerization of acetylene

Apparatus for producing polyacetylene film

An apparatus for producing a polyacetylene film by polymerizing acetylene gas in contact with Ziegler-Natta catalyst comprising in a vessel to be introduced with acetylene gas a rotatably driven film forming drum, a coating member for coating the Ziegler-Natta catalyst on the outer peripheral surface of the drum, a feeding roller driven reversely to the drum in rolling contact with the drum for drawing a polyacetylene film polymerized with the catalyst on the drum, a cleaning member for cleaning the drawn polyacetylene film, and a winding unit for winding the polyacetylene film. Thus, the polyacetylene film can be produced in high quality in a mass production.

An apparatus for producing a polyacetylene film by polymerizing acetylene gas in contact with Ziegler-Natta catalyst comprising: in a vessel to be introduced with acetylene gas a film producing container for storing Ziegler-Natta catalyst, a pair of feed rollers provided adjacently to draw out the polyacetylene film polymerized on the surface of the catalyst and reversely driven in roll contact with each other, a cleaning member for cleaning the drawn polyacetylene film, and a winding unit for winding the polyacetylene film. Thus, the polyacetylene film can be continuously produced with good productivity, and since the speed for drawing the polyacetylene film is varied to regulate the thickness of the film, the films of various size can be readily fabricated in mass production, thereby reducing the cost of the polyacetylene film.

Growing community of inventors

Sapporo, Japan

Ichiro Hide