Kanagawa, Japan

Ichiro Abe

This inventor holds 1 USPTO granted patent. Top assignee: Micron Technology Incorporated. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ichiro Abe. Retrieved from https://idiyas.com/inventor/ichiro-abe-f89usbmp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Ichiro Abe: Innovator in Semiconductor Technology

Introduction

Ichiro Abe is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of devices that enhance memory storage capabilities.

Latest Patents

Ichiro Abe holds a patent for semiconductor devices that include transistors comprising a charge trapping material. This innovative semiconductor device features a memory storage component and a transistor that operates in conjunction with the memory storage element. The design includes a source region, a drain region, and a gate electrode positioned between the source and drain regions. Notably, the transistor incorporates a charge trapping material that surrounds at least the upper portion of the gate electrode, along with an oxide material on the sides of the charge trapping material.

Career Highlights

Ichiro Abe is associated with Micron Technology Incorporated, a leading company in the semiconductor industry. His work focuses on advancing technologies that improve the efficiency and performance of semiconductor devices.

Collaborations

Ichiro has collaborated with notable colleagues, including Fredrick David Fishburn and Haitao Liu, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Ichiro Abe's innovative work in semiconductor devices exemplifies the advancements in technology that enhance memory storage solutions. His contributions continue to influence the field and pave the way for future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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