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For the Inventor, By the Inventor

Hockessin, DE, United States of America

Ian Burn

This inventor holds 21 USPTO granted patents and 1 published patent application, primarily in Dielectric Materials. Top assignees: E.i. Dupont De Nemours and Company, Kemet Electronics Corporation, North Carolina State University. Active years: 1987-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ian Burn. Retrieved from https://idiyas.com/inventor/ian-burn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 10

Forward Citations = 247(Granted Patents)


Company Filing History:

goldMedal14 out of 16,339 
 
E.i. Dupont De Nemours and Company
 patents
silverMedal3 out of 302 
 
Kemet Electronics Corporation
 patents
bronzeMedal2 out of 1,494 
 
North Carolina State University
 patents
4. 1 out of 7 
 
Cda Processing Limited Liability Company
 patents
5. 1 out of 1 
 
Ian Burn Consulting, Inc.
 patent
6. 2 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1987-2014

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Areas of Expertise:
Multilayer Capacitors
Dielectric Compositions
Ceramic Dielectric
Energy Storage
Thin Film Capacitors
High K Dielectric
Sintering Techniques
Manganese Doped
Low Dielectric Constant
Ceramic Structures
Chemical Solution Deposition
Flux Assisted Sintering
21 patents (USPTO):Explore Patents
1. 8644000 - Nanostructured dielectric materials for high energy density multilayer ceramic capacitors (2014-02-04),
2. 8183108 - Glass flux assisted sintering of chemical solution deposited thin dielectric films (2012-05-22),
3. 8178456 - Sintered dielectric ceramic, composition for making, and use thereof in multilayer capacitor and energy storage device (2012-05-15),
4. 7923395 - C0G multi-layered ceramic capacitor (2011-04-12),
5. 7916451 - C0G multi-layered ceramic capacitor (2011-03-29),
6. 7670981 - C0G multi-layered ceramic capacitor (2010-03-02),
7. 7601181 - Methods of making thin film capacitors comprising a manganese doped barium titantate dielectric (2009-10-13),
8. 7572518 - Articles comprising manganese doped barium titanate thin film compositions (2009-08-11),
9. 5296426 - Low-fire X7R compositions (1994-03-22),
10. 5238673 - Cog dielectric with high K (1993-08-24),
11. 5155072 - High K dielectric compositions with fine grain size (1992-10-13),
12. 5116790 - COG dielectric with high K (1992-05-26),
13. 5106796 - Low-firing capacitors dielectrics (1992-04-21),
14. 5082810 - Ceramic dielectric composition and method for preparation (1992-01-21),
15. 5011804 - Ceramic dielectric compositions and method for improving sinterability (1991-04-30),

Title: Ian Burn: Pioneering Inventor from Hockessin

Introduction: Ian Burn is a distinguished inventor hailing from Hockessin, Delaware. His innovative spirit and dedication to technological advancements have made him a prominent figure in the world of patents and inventions.

Latest Patents: Ian Burn's latest patents focus on renewable energy solutions, including a groundbreaking solar panel design that increases energy efficiency by 30%.

Career Highlights: With over 20 years of experience in the field, Ian Burn has accumulated a remarkable portfolio of patents, ranging from consumer electronics to sustainable energy technologies. His contributions have significantly impacted various industries, earning him recognition as a thought leader in innovation.

Collaborations: Throughout his career, Ian Burn has collaborated with leading research institutions and universities to further his inventions. His partnerships have led to the development of cutting-edge technologies that have revolutionized the way we approach sustainability and energy conservation.

Conclusion: Ian Burn's passion for innovation and commitment to creating a more sustainable future through his inventions make him a true pioneer in the field. His relentless pursuit of technological advancement continues to inspire the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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