The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Jun. 15, 2006
Applicants:

William J. Borland, Cary, NC (US);

Seigi Suh, Cary, NC (US);

Jon-paul Maria, Raleigh, NC (US);

Jon Fredrick Ihlefeld, Raleigh, NC (US);

Ian Burn, Hockessin, DE (US);

Inventors:

William J. Borland, Cary, NC (US);

Seigi Suh, Cary, NC (US);

Jon-Paul Maria, Raleigh, NC (US);

Jon Fredrick Ihlefeld, Raleigh, NC (US);

Ian Burn, Hockessin, DE (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01B 3/20 (2006.01); H01B 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.


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