I-Wen Hsu

Title: I-Wen Hsu: Innovator in Semiconductor Technology

Introduction

I-Wen Hsu is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in device formation. His work is recognized for its potential impact on the efficiency and performance of semiconductor devices.

Latest Patents

I-Wen Hsu holds a patent for a semiconductor device and method of forming the same. This patent describes a method where plural semiconductor fins are formed on a substrate, with trenches created between adjacent fins. A silicon liner layer is deposited conformally to the fins and trenches using a silane compound. An oxide layer is then deposited to fill the trenches and cover the fins, which results in the formation of water within the oxide layer. The surface of the silicon liner layer reacts with the water to remove it from the oxide layer, showcasing a novel approach to semiconductor fabrication. He has 1 patent to his name.

Career Highlights

I-Wen Hsu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role involves research and development, focusing on enhancing semiconductor manufacturing processes. His innovative methods contribute to the advancement of technology in this critical sector.

Collaborations

I-Wen Hsu has collaborated with several talented individuals in his field, including Yu-Yun Peng and An-Di Sheu. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

I-Wen Hsu's contributions to semiconductor technology exemplify the innovative spirit of modern inventors. His work not only advances the field but also sets the stage for future developments in semiconductor devices.