The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Oct. 24, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
I-Wen Hsu, Kaohsiung, TW;
Yu-Yun Peng, Hsinchu, TW;
An-Di Sheu, Hsinchu, TW;
Jei-Ming Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method is provided. Plural semiconductor fins are formed on a substrate, and plural trenches each of which is formed between two adjacent semiconductor fins. A silicon liner layer is deposited to be conformal to the semiconductor fins and the trenches. The silicon liner layer is deposited by using a silane compound. Then, an oxide layer is deposited on the silicon liner layer to fill the trenches and cover the semiconductor fins, in which depositing the oxide layer forms water in the oxide layer. Next, a surface of the silicon liner layer is reacted with the water, so as to remove the water from the oxide layer.