I-Hsin Sung

Title: I-Hsin Sung: Innovator in Physically Unclonable Function Devices

Introduction

I-Hsin Sung is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of physically unclonable function (PUF) devices. His innovative approach has garnered attention in the industry.

Latest Patents

I-Hsin Sung holds a patent for a "Method for fabricating physically unclonable function device." This patent outlines a method that includes defining a PUF cell region on a substrate and forming a defect within that region. The process involves creating a shallow trench isolation (STI) on the substrate, applying a gate material layer, and patterning it to establish connections between gate materials through an epitaxial layer.

Career Highlights

Sung is associated with United Microelectronics Corporation, where he applies his expertise in semiconductor fabrication. His work has been instrumental in advancing the capabilities of PUF devices, which are crucial for enhancing security in integrated circuits.

Collaborations

I-Hsin Sung has collaborated with notable colleagues, including Ping-Chia Shih and Che-Hao Kuo. These partnerships have contributed to the successful development of innovative technologies in their field.

Conclusion

I-Hsin Sung's contributions to the field of semiconductor technology, particularly through his patent on PUF devices, highlight his role as an influential inventor. His work continues to impact the industry positively.