The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Mar. 07, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Ping-Chia Shih, Tainan, TW;
Che-Hao Kuo, Tainan, TW;
Ssu-Yin Liu, Kaohsiung, TW;
Ching-Hua Yeh, Tainan, TW;
I-Hsin Sung, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.