I-Chen Huang

Title: I-Chen Huang: Innovator in Semiconductor Technology

Introduction

I-Chen Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative semiconductor device structures and manufacturing methods that enhance device performance.

Latest Patents

One of I-Chen Huang's latest patents is a semiconductor device structure that includes a semiconductor substrate and a gate stack. The gate stack consists of a first insulating layer, a charge trapping structure, a second insulating layer, and a gate electrode. This design aims to improve the efficiency and functionality of semiconductor devices. Another notable patent describes a method of manufacturing high-k dielectric using hafnium oxide and titanium layers. This method involves forming a first hafnium oxide layer on a substrate, followed by a titanium layer, and then a second hafnium oxide layer. The resulting structure is thermally annealed to create a high-k dielectric layer, which is crucial for advanced semiconductor applications.

Career Highlights

I-Chen Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in semiconductor device structures and manufacturing processes has positioned him as a valuable asset to the company.

Collaborations

I-Chen Huang has collaborated with several talented individuals in his field, including Kuang-Hsin Chen and Yung-Hsien Wu. These collaborations have fostered innovation and contributed to the advancement of semiconductor technologies.

Conclusion

I-Chen Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in semiconductor devices and manufacturing methods.