The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Sep. 01, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
I-Chen Huang, Hsin-Chu, TW;
Yi-Ju Hsu, Zhudong Township, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Kuang-Hsin Chen, Jung-Li, TW;
Yung-Hsien Wu, Hsin-Chu, TW;
Chin-Yu Chen, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method of manufacturing same are described. A first hafnium oxide (HfO) layer is formed on a substrate. A titanium (Ti) layer is formed over the first hafnium oxide layer. A second hafnium oxide layer is formed over the titanium layer. The composite device structure is thermally annealed to produce a high-k dielectric structure having a hafnium titanium oxide (HfTiO) layer interposed between the first hafnium oxide layer and the second hafnium oxide layer.