Suwon-si, South Korea

Hyunjun Bae

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 2016-2019

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3 patents (USPTO):Explore Patents

Title: Hyunjun Bae: Innovator in Semiconductor Technology

Introduction: Hyunjun Bae, based in Suwon-si, South Korea, is a distinguished inventor known for his contributions to semiconductor technology. With a total of three patents to his name, Bae has made significant advancements in the design and manufacturing processes of semiconductor devices.

Latest Patents: His latest patent, titled "Semiconductor devices having isolation insulating layers and methods of manufacturing the same," showcases innovative concepts that enhance semiconductor functionality. The inventive designs include a fin region with a first fin subregion and a second fin subregion, which are separated by an isolation insulating layer. The arrangement features multiple gates that intersect these fin subregions and the isolation layer, advancing the capabilities of semiconductor devices.

Career Highlights: Bae currently works at Samsung Electronics Co., Ltd., a leading multinational in technology and electronics. His role as an inventor within this dynamic environment allows him to push the boundaries of current semiconductor technologies and explore new innovations.

Collaborations: Throughout his career, Hyunjun Bae has collaborated with notable coworkers such as Heonjong Shin and Sungmin Kim. These partnerships have facilitated the sharing of knowledge and ideas to drive the development of cutting-edge semiconductor solutions.

Conclusion: As an established inventor, Hyunjun Bae is making significant strides in the semiconductor industry. His latest patents reflect a commitment to innovation that will likely pave the way for future advancements in semiconductor technology. The collaborative spirit at Samsung Electronics Co., Ltd. underscores the importance of teamwork in achieving breakthroughs in high-tech fields.

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