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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10204821 B1

PDFFull Text
Date of Patent:
Feb. 12, 2019

Filed:

Oct. 27, 2016

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

HeonJong Shin, Yongin-si, KR;

Sungmin Kim, Incheon, KR;

Byungseo Kim, Suwon-si, KR;

Sunhom Steve Paak, Seoul, KR;

Hyunjun Bae, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Whitney T Moore

Assistant Examiner:

Herve Assouman

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76202 (2013.01); H01L 21/265 (2013.01); H01L 21/324 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

The inventive concepts provide semiconductor devices and methods of manufacturing the same. Semiconductor devices of the inventive concepts may include a fin region comprising a first fin subregion and a second fin subregion separated and isolated from each other by an isolation insulating layer disposed therebetween, a first gate intersecting the first fin subregion, a second gate intersecting the second fin subregion, and a third gate intersecting the isolation insulating layer.

Find Patent Forward Citations

Shin, HeonJong. (2019). Semiconductor devices having isolation insulating layers and methods of manufacturing the same (U.S. Patent No. 10204821). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10204821

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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