The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jan. 09, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
HeonJong Shin, Yongin-si, KR;
Sungmin Kim, Incheon, KR;
Byungseo Kim, Suwon-si, KR;
Sunhom Steve Paak, Seoul, KR;
Hyunjun Bae, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76202 (2013.01); H01L 21/265 (2013.01); H01L 21/324 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract
The inventive concepts provide semiconductor devices and methods of manufacturing the same. Semiconductor devices of the inventive concepts may include a fin region comprising a first fin subregion and a second fin subregion separated and isolated from each other by an isolation insulating layer disposed therebetween, a first gate intersecting the first fin subregion, a second gate intersecting the second fin subregion, and a third gate intersecting the isolation insulating layer.