Seoul, South Korea

Hyungsoon Shin


Average Co-Inventor Count = 1.3

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2013-2020

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2 patents (USPTO):Explore Patents

Title: Hyungsoon Shin: Innovator in Memory Technology

Introduction

Hyungsoon Shin is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory technology, holding a total of 2 patents. His work focuses on innovative solutions that enhance the performance and efficiency of memory devices.

Latest Patents

One of his latest patents is a one-transistor DRAM cell device based on polycrystalline silicon with a FinFET structure and its fabrication method. This invention provides a polysilicon-based 1T DRAM cell device that significantly improves retention time by physically trapping holes accumulated in the conventional cell body. Additionally, it enhances operating efficiency by increasing the gate's channel control force and allows for batch processing with functional blocks in CPUs that already utilize FinFET structures.

Another notable patent is related to a magnetic memory cell. This invention controls the magnetization direction of the free magnetic layer of a Magnetic Tunnel Junction (MTJ) device using spin torque transfer. It enables the implementation of a magnetic logic circuit that integrates memory and logic circuit functions. The magnetic memory cell includes an MTJ device with top and bottom electrodes, along with a current control circuit that adjusts the magnetization direction of the free layer based on input logic levels.

Career Highlights

Hyungsoon Shin has worked with various institutions, including the Ewha University-Industry Collaboration Foundation and Gachon University of Industry-Academic Cooperation Foundation. His experience in these organizations has allowed him to collaborate on cutting-edge research and development projects.

Collaborations

One of his notable coworkers is Seongjae Cho, with whom he has likely collaborated on various innovative projects in the field of memory technology.

Conclusion

Hyungsoon Shin's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative approaches continue to pave the way for advancements in memory devices.

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