The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Mar. 06, 2008
Hyungsoon Shin, Seoul, KR;
Hyungsoon Shin, Seoul, KR;
Abstract
The present invention relates to a magnetic memory cell, which controls the magnetization direction of the free magnetic layer of a Magnetic Tunnel Junction (MTJ) device using a spin torque transfer, and enables the implementation of a magnetic logic circuit, in which memory and logic circuit functions are integrated. The magnetic memory cell includes an MTJ device () including a top electrode () and a bottom electrode (), which are provided to allow current to flow therethrough, and a fixed layer () and a free layer (), which are magnetic layers respectively deposited on a top and a bottom of an insulating layer (), required to insulate the top and bottom electrodes from each other. A current control circuit () controls a flow of current flowing between the top and bottom electrodes, and changes a magnetization direction of the free layer according to an input logic level.