Daejeon, South Korea

Hyung-Sup Yoon

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1997-1999

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Hyung-Sup Yoon in Semiconductor Technology

Introduction

Hyung-Sup Yoon, an accomplished inventor based in Daejeon, South Korea, has made significant contributions to the field of semiconductor technology. With a total of three patents to his name, Yoon has focused on methods that enhance the efficiency and performance of high-speed semiconductor devices. His work is crucial in advancing technologies that require precision and high-speed capabilities.

Latest Patents

Yoon's latest contributions include the "Fabrication method of T-shaped gate electrode in semiconductor device." This innovative method addresses the fabrication of high-speed semiconductor devices, such as High Electron Mobility Transistors (HEMTs), which are pivotal in low-noise receivers and power amplifiers that operate at frequencies of X-band and above. His approach utilizes electron-beam lithography to create a T-shaped gate electrode, ensuring fine line widths despite the common challenges associated with exposure time in manufacturing.

Another significant patent, "Method of fabricating a compound semiconductor device," outlines a streamlined process for fabricating compound semiconductor devices. This innovation allows for the layering of different epitaxial layers on a shared substrate, enhancing the performance and functionality of semiconductor devices. By utilizing specific insulating film patterns and etching techniques, Yoon's method reduces complexity while improving device interconnectivity and operational efficiency.

Career Highlights

Hyung-Sup Yoon is affiliated with the Electronics and Telecommunications Research Institute, where he has conducted groundbreaking research and development in the semiconductor field. His work not only contributes to advancing semiconductor technology but also positions his institute at the forefront of innovation in electronics. Yoon's expertise lies in fabrication techniques that are crucial for developing next-generation semiconductor devices.

Collaborations

Throughout his career, Yoon has collaborated with notable colleagues, including Jin-Hee Lee and Chul-Sun Park. These collaborations have likely facilitated the exchange of innovative ideas and methodologies, further enhancing the quality and scope of their research outputs. Working alongside talented peer inventors has allowed Yoon to broaden the impact of his patents and contribute to significant advancements in semiconductor technologies.

Conclusion

Hyung-Sup Yoon exemplifies the spirit of innovation in the semiconductor field with his notable patents and research endeavors. His methods for fabricating T-shaped gate electrodes and compound semiconductor devices reflect a deep understanding of the complexities involved in semiconductor technology. As he continues his work at the Electronics and Telecommunications Research Institute, Yoon's contributions will remain pivotal in driving advancements in high-speed electronic applications.

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