Method of fabricating a compound semiconductor device

Abstract

The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate. The method comprises the steps of sequentially forming a plurality of first epitaxial layers for manufacturing the first compound semiconductor device on the semiconductor substrate; forming a first insulating film pattern for defining an active region of the first compound semiconductor device; etching the plurality of first epitaxial layers using the first insulating film pattern as a mask; forming a second insulating film on the resultant structure; forming a sidewall insulating spacer on the sidewall of the active region of the first compound semiconductor device by dry etching the second insulating film; sequentially forming a plurality of second epitaxial layers for manufacturing the second compound semiconductor device on the portion from which the plurality of first epitaxial layers is etched back; forming each electrode of the first and second compound semiconductor devices; and forming an interconnection electrode interconnecting each electrode of the first and second compound semiconductor devices.