Hyung-Sang Park

Title: Innovations of Hyung-Sang Park

Introduction

Hyung-Sang Park is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of materials science and engineering, particularly in the development of advanced deposition techniques. With a total of six patents to his name, Park's work has had a considerable impact on various industries.

Latest Patents

One of his latest patents is a method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate. This invention involves an atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, which comprises at least one layer of silicon dioxide and at least one layer of a metal oxide. The unique feature of this nanolaminate is its wet etch rate, which can be either greater or smaller than the wet etch rates of the individual films of silicon dioxide and metal oxide in a specific etchant. Additionally, Park has developed an atomic layer deposition apparatus that is designed for rapidly depositing thin films on substrates larger than planar substrates. This apparatus optimizes gas flow within the reaction chamber to enhance productivity by minimizing the time required for supplying reactant gases.

Career Highlights

Throughout his career, Hyung-Sang Park has worked with several prominent companies, including Asm Genitech Korea Ltd. and Kyungwon Medical Co., Ltd. His expertise in atomic layer deposition and materials engineering has positioned him as a key figure in his field.

Collaborations

Park has collaborated with notable colleagues such as Kyung Il Hong and Dae Youn Kim, contributing to various innovative projects and advancements in technology.

Conclusion

Hyung-Sang Park's contributions to the field of materials science through his patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in deposition techniques and materials engineering.