The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jun. 29, 2011
Kyung IL Hong, Chungchungnam-do, KR;
Dae Youn Kim, Daejeon, KR;
Hyung-sang Park, Seoul, KR;
Sang Jin Jeong, Daejeon, KR;
Wonyong Koh, Daejoen, KR;
Herbert Terhorst, Amersfoort, NL;
Kyung Il Hong, Chungchungnam-do, KR;
Dae Youn Kim, Daejeon, KR;
Hyung-Sang Park, Seoul, KR;
Sang Jin Jeong, Daejeon, KR;
Wonyong Koh, Daejoen, KR;
Herbert Terhorst, Amersfoort, NL;
ASM Genitech Korea Ltd., , KR;
Abstract
The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.