The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Nov. 23, 2009
Applicants:
Peter Zagwijn, LX Nijkerk, NL;
Hyung-sang Park, Seoul, KR;
Stijn DE Vusser, Heverlee, BE;
Inventors:
Assignee:
ASM International N.V., Almere, NL;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch rate of a film of silicon dioxide and a wet etch rate of a film of said metal oxide in said etchant. Also provided is a method for manufacturing the same.
Zagwijn, Peter. (2012). Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate (U.S. Patent No. 8242029). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8242029
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile