Osan-si, South Korea

Hyung Jong Lee

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 46(Granted Patents)


Location History:

  • Gwangju, KR (2011)
  • Subuk-Myeon, KR (2015)
  • Osan-si, KR (2017 - 2024)

Company Filing History:


Years Active: 2011-2024

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14 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Hyung Jong Lee

Introduction

Hyung Jong Lee is a prominent inventor based in Osan-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Hyung Jong Lee's latest patents include innovative designs for semiconductor devices. One notable patent describes a semiconductor device that features a first active pattern on a substrate. This design includes a pair of first source/drain patterns and a first channel pattern situated between them. A gate electrode is positioned on the first channel pattern, accompanied by a first gate spacer on the side surface of the gate electrode. The first gate spacer consists of a first spacer and a second spacer, with the top surface of the first spacer being lower than that of the second spacer. Additionally, a first blocking pattern is placed on the first spacer, and a gate contact is connected to the gate electrode, with the first blocking pattern interposed between the gate contact and the second spacer.

Another significant patent involves a semiconductor device that incorporates fin-type active patterns with shared contact plugs. This device includes a source/drain region within a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer covering both the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer, featuring a first lower portion connected to the source/drain region, a second lower portion linked to the gate structure, and an upper portion that connects the upper surfaces of both lower portions. A plug spacer film is situated between the insulating layer and at least one of the lower portions, consisting of a material distinct from that of the insulating layer.

Career Highlights

Hyung Jong Lee has worked with notable companies, including Samsung Electronics Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Hyung Jong Lee has collaborated with talented individuals such as Changseop Yoon and Kwangsub Yoon. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Hyung Jong Lee's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative designs continue to influence the advancement

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