The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

May. 24, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byung Chan Ryu, Seongnam-si, KR;

Jong Ho You, Seongnam-si, KR;

Hyung Jong Lee, Osan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/76877 (2013.01); H01L 21/823431 (2013.01); H01L 23/5226 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device includes a lower interlayer insulating film including a first trench and a second trench adjacent each other; a first gate structure within the first trench and extending in a first direction; a second gate structure within the second trench and extending in the first direction; a source/drain adjacent the first gate structure and the second gate structure; an upper interlayer insulating film on the lower interlayer insulating film; and a contact connected to the source/drain, the contact in the upper interlayer insulating film and the lower interlayer insulating film, wherein the contact includes a first side wall and a second side wall, the first side wall of the contact and the second side wall of the contact are asymmetric with each other, and the contact does not vertically overlap the first gate structure and the second gate structure.


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