This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016-2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016-2018
Title: Hyun-Suk Chun: Innovator in Semiconductor Technology
Introduction
Hyun-Suk Chun is a prominent inventor based in Yongin, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work is instrumental in advancing the capabilities of semiconductor devices.
Latest Patents
Hyun-Suk Chun's latest patents include a semiconductor device and a method of manufacturing the same. The semiconductor device comprises a semiconductor chip that includes at least one gate structure on a substrate. This gate structure features a first region, a second region different from the first region, and a third region situated between the first and second regions. The device also includes a first redistribution layer on the top surface of the semiconductor chip, which is configured to electrically connect a first electrode pad of the semiconductor chip to a first solder ball while overlapping the first region of the gate structure. Additionally, a second redistribution layer is present on the top surface, connecting a second electrode pad to a second solder ball and overlapping the second region of the gate structure, thereby exposing the third region. An insulating layer is placed on both redistribution layers.
Another notable patent is the method of forming a bump pad structure having a buffer pattern. This method involves forming an upper layer on a lower layer, creating a metal interconnection in the upper layer, and forming a passivation layer that exposes the center part of the metal interconnection. A buffer pattern is then formed to expose the center part of the metal interconnection while selectively covering a peripheral region of the metal interconnect and part of the passivation layer. Finally, a wrapping pattern is created to cover the buffer pattern and expose the center part of the metal interconnection on the passivation layer, culminating in the formation of a pad pattern on the center part of the metal interconnection.
Career Highlights
Hyun-Suk Chun is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced technologies that are essential for modern electronic devices.
Collaborations
Throughout his career, Hyun-Suk Chun has collaborated with notable colleagues, including Yong-sang Cho and Soo-Jae Park. These collaborations have fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
