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For the Inventor, By the Inventor

Hwaseong, South Korea

Hyun-ho Noh

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-ho Noh. Retrieved from https://idiyas.com/inventor/hyun-ho-noh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 6.4

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal4 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2017-2020

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4 patents (USPTO):Explore Patents
1. 10790361 - Semiconductor device having a fin structure and a manufacturing method thereof (2020-09-29),
2. 10304932 - Semiconductor device having a fin structure and a manufacturing method thereof (2019-05-28),
3. 9793356 - Semiconductor device and method for fabricating the same (2017-10-17),
4. 9608117 - Semiconductor devices including a finFET (2017-03-28),

Title: Hyun-ho Noh: Pioneering Inventor from Hwaseong-si, KR

Introduction: Hyun-ho Noh is a distinguished male inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of innovation.

Latest Patents: Hyun-ho Noh holds several patents in various technological domains, showcasing his versatility and ingenuity in creating novel solutions to complex problems.

Career Highlights: Throughout his illustrious career, Hyun-ho Noh has consistently pushed the boundaries of technological advancement, earning recognition for his innovative spirit and dedication to progress.

Collaborations: Hyun-ho Noh has collaborated with leading research institutions, universities, and companies, fostering a culture of innovation and knowledge-sharing to drive meaningful change in the industry.

Conclusion: Hyun-ho Noh stands as a beacon of inspiration in the world of invention, with his pioneering work leaving a lasting impact on the landscape of innovation in Hwaseong-si, KR, and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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