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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793356 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Aug. 11, 2015

Semiconductor device and method for fabricating the same

Applicants:

Jeong-ho Yoo, Seongnam-si, KR;

Byeong-chan Lee, Yongin-si, KR;

Hyun-ho Noh, Hwaseong-si, KR;

Yong-kook Park, Yongin-si, KR;

Bon-young Koo, Suwon-si, KR;

Jin-yeong Joe, Suwon-si, KR;

Inventors:

Jeong-Ho Yoo, Seongnam-si, KR;

Byeong-Chan Lee, Yongin-si, KR;

Hyun-Ho Noh, Hwaseong-si, KR;

Yong-Kook Park, Yongin-si, KR;

Bon-Young Koo, Suwon-si, KR;

Jin-Yeong Joe, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Angel Roman

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.

Find Patent Forward Citations

Yoo, Jeong-Ho. (2017). Semiconductor device and method for fabricating the same (U.S. Patent No. 9793356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9793356

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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