The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Aug. 11, 2015
Applicants:

Jeong-ho Yoo, Seongnam-si, KR;

Byeong-chan Lee, Yongin-si, KR;

Hyun-ho Noh, Hwaseong-si, KR;

Yong-kook Park, Yongin-si, KR;

Bon-young Koo, Suwon-si, KR;

Jin-yeong Joe, Suwon-si, KR;

Inventors:

Jeong-Ho Yoo, Seongnam-si, KR;

Byeong-Chan Lee, Yongin-si, KR;

Hyun-Ho Noh, Hwaseong-si, KR;

Yong-Kook Park, Yongin-si, KR;

Bon-Young Koo, Suwon-si, KR;

Jin-Yeong Joe, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.


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