Location History:
- Gyeonggi-do, KR (2014 - 2015)
- Icheon, KR (2015)
- Icheon-si, KR (2018 - 2020)
Company Filing History:
Years Active: 2014-2020
Title: Hyuck-Sang Yim: Innovator in Semiconductor Memory Technology
Introduction
Hyuck-Sang Yim is a prominent inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor memory technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of electronic devices through innovative memory solutions.
Latest Patents
One of Hyuck-Sang Yim's latest patents is titled "Electronic device with semiconductor memory having increased read margin." This invention includes a semiconductor memory that features a cell array with multiple resistive storage cells. The design incorporates a current code generation block that generates a current code corresponding to the average value of test currents flowing through at least two resistive storage cells during a test operation. Additionally, a sensing block compares a read current from a selected resistive storage cell with a reference current to accurately sense data. The semiconductor memory is designed to adjust the current flowing through the sensing block based on the current code value, thereby improving its performance.
Career Highlights
Hyuck-Sang Yim has worked with notable companies in the semiconductor industry, including SK Hynix Inc. and Hynix Semiconductor Inc. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technologies.
Collaborations
Throughout his career, Hyuck-Sang Yim has collaborated with talented professionals, including Taek Sang Song and Kwang-Seok Kim. These collaborations have contributed to the advancement of semiconductor memory technologies.
Conclusion
Hyuck-Sang Yim's innovative work in semiconductor memory technology has positioned him as a key figure in the industry. His patents reflect a commitment to enhancing electronic devices, making significant strides in memory performance.