Skhynix Inc.

Hynix Semiconductor Inc.

Hyuck-Sang Yim

Taek-Sang Song

Chul-Hyun Park

Taek Sang Song

Kwang-Seok Kim

An electronic device including a semiconductor memory. The semiconductor memory may include a cell array including a plurality of resistive storage cells; a current code generation block suitable for generating a current code which has a value corresponding to an average value of current amounts of test currents respectively flowing through at least two first resistive storage cells among the plurality of resistive storage cells, in a test operation; and a sensing block suitable for comparing a read current flowing through a second resistive storage cell selected among the plurality of resistive storage cells with a reference current, and thereby sensing data of the second resistive storage cell, wherein the semiconductor memory is operable to adjust a current amount of at least one current flowing through the sensing block based on the value of the current code.

Electronic device with semiconductor memory having increased read margin

An electronic device including a semiconductor memory is disclosed. The semiconductor memory includes a read path including a unit storage cell; a reference path including a unit reference cell; read circuit suitable for comparing a read current flowing on the read path with a reference current flowing on the reference path in response to a read voltage and a reference voltage, and sensing data stored in the unit storage cell based on the comparison result; a first replica path suitable for modeling the read path; and a reference voltage generation unit suitable for generating the reference voltage corresponding to a first replica current flowing on the first replica path in response to the read voltage.

Electronic device

A semiconductor device includes: a write current generator configured to generate a write current corresponding to a write reference voltage in a write mode and to have a negative feedback structure. The semiconductor device may further comprise a variable resistance device configured to have a resistance value that varies with the write current.

Semiconductor device, and microprocessor, processor, system, data storage system and memory system including the semiconductor device for generating current supplied to write path

A resistive memory device includes a plurality of memory cells, each of which is configured to store a normal data, a first reference data corresponding to a first resistance state and a second reference data corresponding to a second resistance state, a data copy unit configured to temporarily store the normal data read from a selected memory cell and generate a copied cell current based on the stored normal data, a mirroring block configured to temporarily store the first and second reference data read from the selected memory cell, and to generate a first reference current and a second reference current based on the stored first and second reference data, respectively, and a sensing unit configured to sense the stored normal data based on the copied cell current and the first reference current and the second reference current.

Resistive memory device and method for driving the same

A non-volatile memory device includes a memory cell including a resistance variable device and a switching unit for controlling a current flowing through the resistance variable device; a read reference voltage generator configured to generate a reference voltage according to a skew occurring in the switching unit; and a sense amplifier configured to sense a voltage corresponding to the current that flows through the resistance variable device based on the reference voltage.

Growing community of inventors

Icheon-si, South Korea

Hyuck-Sang Yim