The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2014

Filed:

Dec. 29, 2011
Applicants:

Hyuck-sang Yim, Gyeonggi-do, KR;

Kwang-seok Kim, Gyeonggi-do, KR;

Taek-sang Song, Gyeonggi-do, KR;

Chul-hyun Park, Gyeonggi-do, KR;

Inventors:

Hyuck-Sang Yim, Gyeonggi-do, KR;

Kwang-Seok Kim, Gyeonggi-do, KR;

Taek-Sang Song, Gyeonggi-do, KR;

Chul-Hyun Park, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes a memory cell including a resistance variable device and a switching unit for controlling a current flowing through the resistance variable device; a read reference voltage generator configured to generate a reference voltage according to a skew occurring in the switching unit; and a sense amplifier configured to sense a voltage corresponding to the current that flows through the resistance variable device based on the reference voltage.


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