The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Dec. 31, 2014
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Hyuck-Sang Yim, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06F 12/0802 (2016.01); G11C 7/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G06F 12/0802 (2013.01); G11C 7/227 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G06F 2212/202 (2013.01); G06F 2212/222 (2013.01); G06F 2212/305 (2013.01); G11C 2013/0054 (2013.01);
Abstract

An electronic device including a semiconductor memory is disclosed. The semiconductor memory includes a read path including a unit storage cell; a reference path including a unit reference cell; read circuit suitable for comparing a read current flowing on the read path with a reference current flowing on the reference path in response to a read voltage and a reference voltage, and sensing data stored in the unit storage cell based on the comparison result; a first replica path suitable for modeling the read path; and a reference voltage generation unit suitable for generating the reference voltage corresponding to a first replica current flowing on the first replica path in response to the read voltage.


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