IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Hye-Jin Cho

USPTO Granted Patents = 14

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 156(Granted Patents)


Company Filing History:

goldMedal14 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2013

Loading Chart...
14 patents (USPTO):Explore Patents
1. 8546865 - Nonvolatile memory device having stacked semiconductor layers and common source line adjacent to bit line plug (2013-10-01),
2. 8030698 - Nonvolatile memory device (2011-10-04),
3. 7955884 - Semiconductor packages (2011-06-07),
4. 7915138 - Methods of manufacturing non-volatile memory devices (2011-03-29),
5. 7897463 - Methods of fabricating vertical twin-channel transistors (2011-03-01),
6. 7768070 - Semiconductor devices having field effect transistors (2010-08-03),
7. 7541645 - Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions (2009-06-02),
8. 7473963 - Metal oxide semiconductor (MOS) transistors having three dimensional channels (2009-01-06),
9. 7332386 - Methods of fabricating fin field transistors (2008-02-19),
10. 7285466 - Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels (2007-10-23),
11. 7265418 - Semiconductor devices having field effect transistors (2007-09-04),
12. 7227220 - Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines (2007-06-05),
13. 7129541 - Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate (2006-10-31),
14. 7122431 - Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions (2006-10-17),

Title: Hye-Jin Cho: Innovator in Nonvolatile Memory Technology

Introduction

Hye-Jin Cho is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 14 patents. His work focuses on advancing memory technology, which is crucial for modern electronic devices.

Latest Patents

Hye-Jin Cho's latest patents include a nonvolatile memory device featuring stacked semiconductor layers and a common source line adjacent to the bit line plug. This innovative device boasts a three-dimensional structure that enhances memory performance. The design incorporates multiple stacked semiconductor layers, with memory cell transistors formed on each layer and serially connected. This configuration allows for a cell string that forms a current path across the semiconductor layers, with selection transistors connected at both ends of the cell string.

Career Highlights

Hye-Jin Cho has established himself as a key figure in the development of advanced memory technologies. His work at Samsung Electronics Co., Ltd. has positioned him at the forefront of innovation in the semiconductor industry. His patents reflect a deep understanding of memory architecture and its applications in consumer electronics.

Collaborations

Hye-Jin Cho collaborates with talented colleagues, including Eun-jung Yun and Sung-Min Kim. These partnerships foster a creative environment that drives innovation and enhances the development of cutting-edge memory solutions.

Conclusion

Hye-Jin Cho's contributions to nonvolatile memory technology exemplify the impact of innovative thinking in the semiconductor industry. His patents and collaborative efforts continue to shape the future of memory devices, making significant strides in technology advancement.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…