Jiangsu, China

Hushan Cui

USPTO Granted Patents = 3 

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2024

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3 patents (USPTO):Explore Patents

Title: Innovations of Hushan Cui in Magnetic Tunnel Junction Technology

Introduction

Hushan Cui is a prominent inventor based in Jiangsu, China, known for his significant contributions to the field of magnetic tunnel junction technology. With a total of three patents to his name, Cui has developed innovative methods that enhance the performance and reliability of MRAM devices.

Latest Patents

Cui's latest patents include a multilayer magnetic tunnel junction etching method and an MRAM device. This innovative etching method processes a wafer according to specific steps without interrupting vacuum conditions. By utilizing both a reactive ion plasma etching chamber and an ion beam etching chamber, the method ensures that the processing of the multilayer magnetic tunnel junction occurs in a vacuum environment. This approach minimizes the impact of external factors on the etching process. The combination of etching and cleaning techniques results in a device structure that maintains excellent steepness while significantly reducing metal contamination and damage to the magnetic tunnel junction film structure. Consequently, this innovation greatly enhances the performance and reliability of the device. Additionally, the use of both etching chambers addresses the limitations of existing single etching methods, thereby improving production efficiency and etching process precision.

Career Highlights

Hushan Cui is currently employed at Jiangsu Leuven Instruments Co. Ltd., where he continues to push the boundaries of technology in his field. His work has been instrumental in advancing the capabilities of magnetic tunnel junctions, which are critical components in modern electronic devices.

Collaborations

Cui collaborates with talented colleagues, including Zhongyuan Jiang and Ziming Liu, who contribute to the innovative environment at Jiangsu Leuven Instruments Co. Ltd.

Conclusion

Hushan Cui's contributions to the field of magnetic tunnel junction technology exemplify the impact of innovative thinking in advancing electronic device performance. His patents reflect a commitment to enhancing the reliability and efficiency of MRAM devices, marking him as a significant figure in the realm of modern inventions.

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