The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
May. 23, 2019
Jiangsu Leuven Instruments Co. Ltd, Jiangsu, CN;
Zhongyuan Jiang, Jiangsu, CN;
Ziming Liu, Jiangsu, CN;
Juebin Wang, Jiangsu, CN;
Dongchen Che, Jiangsu, CN;
Hushan Cui, Jiangsu, CN;
Dongdong Hu, Jiangsu, CN;
Lu Chen, Jiangsu, CN;
Huiqun Ren, Jiangsu, CN;
Zhiwen Zou, Jiangsu, CN;
Kaidong Xu, Jiangsu, CN;
JIANGSU LEUVEN INSTRUMENTS CO. LTD, Jiangsu, CN;
Abstract
A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (), a vacuum transition chamber (), a reactive ion plasma etching chamber (), an ion beam etching chamber (), a film coating chamber (), and a vacuum transport chamber (). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (); then, ion beam etching is performed to etch into a fixed layer () and stopped near a bottom electrode metal layer (), leaving only a small amount of the fixed layer (); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.