The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
May. 23, 2019
Jiangsu Leuven Instruments Co. Ltd, Jiangsu, CN;
Juebin Wang, Jiangsu, CN;
Zhongyuan Jiang, Jiangsu, CN;
Ziming Liu, Jiangsu, CN;
Dongchen Che, Jiangsu, CN;
Hushan Cui, Jiangsu, CN;
Dongdong Hu, Jiangsu, CN;
Lu Chen, Jiangsu, CN;
Dajian Han, Jiangsu, CN;
Zhiwen Zou, Jiangsu, CN;
Kaidong Xu, Jiangsu, CN;
JIANGSU LEUVEN INSTRUMENTS CO. LTD, Jiangsu, CN;
Abstract
A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber () and an ion beam etching chamber () are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber () and the reactive ion plasma etching chamber () solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.