Jiangsu, China

Dajian Han

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Jiangsu Leuven Instruments Co. Ltd. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dajian Han. Retrieved from https://idiyas.com/inventor/dajian-han

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2024

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2 patents (USPTO):Explore Patents

Title: Dajian Han: Innovator in Magnetic Tunnel Junction Technology

Introduction

Dajian Han is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of magnetic tunnel junction technology, holding 2 patents that enhance the performance and reliability of devices in this area.

Latest Patents

His latest patents include a multilayer magnetic tunnel junction etching method and an MRAM device. The multilayer magnetic tunnel junction etching method involves processing a wafer according to specific steps without interrupting vacuum. This method utilizes a reactive ion plasma etching chamber and an ion beam etching chamber separately at least once. The processing of the multilayer magnetic tunnel junction is consistently conducted in a vacuum environment, which helps avoid the impact of external conditions on etching. By combining etching and cleaning processes, the device structure maintains good steepness, significantly reducing metal contamination and damage to the magnetic tunnel junction film structure. This innovation greatly enhances the performance and reliability of the device. Furthermore, the use of both etching chambers addresses the technical challenges associated with existing single etching methods, thereby increasing production efficiency and etching process precision.

Another notable patent is the method for etching a magnetic tunnel junction. This method employs an etching apparatus that includes a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber, and a vacuum transport chamber. The method requires multiple performances of reactive ion and plasma etching, ion beam etching, and film coating, with the delivery between chambers conducted under vacuum.

Career Highlights

Dajian Han is currently associated with Jiangsu Leuven Instruments Co. Ltd., where he continues to innovate in the field of magnetic tunnel junction technology. His work has been instrumental in advancing the capabilities of MRAM devices.

Collaborations

He collaborates with talented coworkers, including Ziming Liu and Juebin Wang, contributing to a dynamic and innovative work environment.

Conclusion

Dajian Han's contributions to magnetic tunnel junction technology through his patents and work at Jiangsu Leuven Instruments Co. Ltd. highlight his role as a key innovator in this field. His advancements not only improve device performance but also pave the way for future innovations in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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